Ideal for front-end RF amplifiers, ensuring high signal-to-noise ratios.
) and allows for AGC (Automatic Gain Control) voltage implementation directly on the second gate. According to historical manufacturing parameters from suppliers like Jotrin Electronics and Veswin , the primary limits and electrical behaviors include:
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: The dual-gate structure allows one gate to receive the RF signal and the other to receive the Local Oscillator (LO) signal, resulting in efficient mixing. : The dual-gate structure allows one gate to
The 3SK41 is a silicon N-channel dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced primarily by Hitachi (now Renesas) and later by NEC. Unlike a standard JFET or single-gate MOSFET, the dual-gate architecture offers a unique advantage: it combines the low-noise characteristics of a JFET with the automatic gain control (AGC) capability of a bipolar transistor.
The 3SK41 remains a powerful, reliable choice for high-frequency RF amplification in legacy or specialized equipment. Its ability to provide low-noise amplification, combined with easy AGC control via its dual-gate design, makes it a noteworthy component in the history of communication electronics. When repairing or designing older RF circuits, the 3SK41 (or its modern equivalents) is an excellent component to consider. The 3SK41 remains a powerful, reliable choice for
The provides critical technical specifications for an legacy N-channel dual-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) . Originally manufactured by Japanese and global semiconductor pioneers including NEC, Hitachi, and Motorola , the 3SK41 was built in a TO-72 (CAN-4) metal package . It was engineering-optimized for high-frequency RF amplification, fast switching, and low noise figures in consumer and industrial communication tuners.
Because original components from NEC or Motorola are increasingly difficult to source outside of "New Old Stock" (NOS) channels, cross-referencing equivalent parts is often necessary for repair and restoration work. Original Device Replacement Drop-in / Near Equivalent Package Type Primary Application Target 3SK45 CAN-4 / TO-72 Low-Noise RF Amplifier 3SK41 CAN-4 / TO-72 VHF/UHF Preamplification 3SK41 High-Gain RF/IF Stages 3SK41 SOT-143 (SMD) Modern Surface-Mount RF Tuners
): Typically ranges between 10 to 20 mS (millisiemens), indicating high sensitivity. Generally around 5.0 pF. Reverse Transfer Capacitance ( Crsscap C r s s
The dual-gate construction of the 3SK41 can be modeled as two independent FETs connected in a cascode configuration within a single package. This specific topology provides two massive design advantages: Automatic Gain Control (AGC)